JUNE 8-13, 2014 • DENVER, COLORADO
97
TECHNICAL PROGRAM
(322-A44)
Toward an efficient extremely thin absorber solar
cell based on ZnO nanowire arrays.
Jérôme Michallon
1,2
,
Mehdi Daanoune
1
, Davide Bucci
1
, Jérôme Garnier
2
, Estelle
Appert
2
, Quentin Rafhay
1
, Vincent Consonni
2
, Anne Kaminski-
Cachopo
1
.
1
IMEP-LAHC, Grenoble, France,
2
LMGP, Grenoble,
France.
(323-A47)
Electron microscopy studies of III-Sb–based
quantum dot solar cell structures.
Andrew G. Norman
1
,
Ramesh B. Laghumavarapu
2
, Meng Sun
2
, Paul J. Simmonds
2
,
Baolai Liang
2
, Diana L. Huffaker
2
.
1
National Renewable
Energy Laboratory, Golden, CO, USA,
2
Electrical Engineering
Department University of California Los Angeles, Los Angeles,
CA, USA.
(324-B2)
Effects of Doping on Carrier Confinement in InAs
QD Solar Cells.
Stephen J. Polly, Staffan Hellström, David V.
Forbes, Seth M. Hubbard.
Rochester Institute of Technology,
Rochester, NY, USA.
(325-B5)
Effect of Miniband Formation in a Quantum Dot
Super Lattice Fabricated by Combination of Bio-Template
and Neutral Beam Etching for High Efficiency Quantum
Dot Solar Cells.
Mohammad Maksudur Rahman
1,4
, Makoto
Igarashi
1,4
, Weiguo Hu
1,4
, Mohd Erman Syazwan
1,4
, Takeru
Okada
1
, Yasuke Hoshi
2
, Noritaka Usami
2
, Seiji Samukawa
1,3,4
.
1
1Institute of Fluid Science, Tohoku University, Sendai, Japan,
2
Graduate School of Engineering, Nagoya University, Nagoya,
Japan,
3
WPI Advanced Institute for Materials Research, Tohoku
University, Sendai, Japan,
4
Japan Science and Technology
Agency, CREST, Tokyo, Japan.
(326-B8)
Effect of Hydrogen Passivation on Optical
Properties of a–Si/SiNX Multilayered Films with Si-QDs
and without Si–QDs.
Dharmendra kumar R. Rai
1
, Bikas
Rajan
2
, Ashish K. Panchal
3
, K. R. Balasubramaniam
1
, Chetan
S. Solanki
1
.
1
NCPRE, Department of Energy Science and
Engineering, IIT Bombay, Powai, Mumbai - 400076, India,
2
Department of Nuclear and Atomic Physics, TIFR, Mumbai –
400005, India,
3
Electrical Engineering Department, S. V. NIT,
Surat – 395007, India.
(327-B11)
Effect of External Bias on Multi-stacked InAs/
AlGaAs Quantum Dots Solar Cell.
Yasushi Shoji, Yoshitaka
Okada.
Research Center for Advanced Science and
Technology, The University of Tokyo, Tokyo, Japan.
(328-B14)
Investigation of the Cause of Reduced Open
Circuit Voltage in Ge/Si Quantum Dot Solar Cells.
Takeshi
Tayagaki
1,2
, Yusuke Hoshi
3
, Noritaka Usami
3
.
1
Kyoto University,
Uji, Japan,
2
PRESTO-JST, Kawaguchi, Japan,
3
Nagoya
University, Nagoya, Japan.
(329-B17)
Surface Recombination Dependent Performance
of A Nano-scale P-n Junction Solar Cell.
Hung-Ruei Tseng,
Shun-Chieh Hsu, Shih-Li Lin, Yin-Han Chen, Chien-Chung Lin.
Institute of Photonic System, National Chiao Tung University,
Tainan, Taiwan.
(330-B20)
Influence of the preparation conditions
in the morphology and photoluminescence of CdS
nanostructures.
Patricia Gutiérrez Zayas-Bazán
1
, Karla
Gutiérrez Z-B
1
, Guillermo Santana
2
, Jaime Santoyo-Salazar
3
,
Josué Esaú Romero-Ibarra
4
, Gerardo Contreras-Puente
5
,
Luis Carlos Hernández
6
, María Tamargo
6
, Osvaldo de Melo
1
.
1
Facultad de Física, Universidad de La Habana, La Habana,
Cuba,
2
Instituto de Investigación en Materiales, UNAM, Mexico
D.F., Mexico,
3
Departamento de Física, CINVESTAV-IPN,
Mexico D.F., Mexico,
4
Laboratorio de nanoscopía electrónica,
CINVESTAV-IPN, Mexico D.F., Mexico,
5
Escuela Superior de
Física y Matemáticas-IPN, Mexico D.F., Mexico,
6
City College
of New York, New York, NY, USA.
