JUNE 16-21, 2013 • TAMPA, FLORIDA
133
G10
(329)
Improved Rear Metallization design for
Bifacial Solar Cells based on Uncapped Al
2
O
3
and Local Firing-Through Al-BSF
I. Cesar
1
,
P. Manshanden
1
,
P. Barton
1
,
O.
Siarheyeva
2
,
E.H.A. Granneman
2
,
A.W. Weeber
1
1
ECN Solar Energy, Petten, Netherlands,
2
Levitech
BV, Almere, Netherlands
G14
(330)
Ultra-thin single crystal silicon modules
capable of 450 W/kg and bending radii <1mm:
fabrication and characterization
Jose L. Cruz-Campa, Murat Okandan, Gregory
N. Nielson, Paul J. Resnick, Carlos A. Sanchez,
Janet Nguyen, Benjamin Yang, Alice C. Kilgo,
Christine Ford, Jeff S. Nelson, Vipin Gupta
Sandia National Laboratories, Albuquerque, NM,
USA
G18
(331)
Sensitivity of surface passivation and
interface quality in IBC-SHJ solar cells to
patterning process
Ujjwal Das, Jianbo He, Zhan Shu, Lulu Zhang,
Chris Thompson, Robert Birkmire, Steven
Hegedus
Institute of Energy Conversion, University of
Delaware, Newark, DE, USA
G22
(332)
Optical and Microstructural Properties
of TiO
2
Anti-Reflection Coatings Deposited via
In-Line APCVD
Kristopher O. Davis
1,2
,
Kaiyun Jiang
3
,
Carsten
Demberger
3
,
Heiko Zunft
3
,
Dirk Habermann
3
,
Winston V. Schoenfeld
1,2
1
Florida Solar Energy Center, University of Central
Florida, Orlando, FL, USA,
2
CREOL, College
of Optics and Photonics, University of Central
Florida, Orlando, FL, USA,
3
Gebr. Schmid GmbH
&
Co., Freudenstadt, Germany
G26
(333)
Large area (150 cm
2
)
SLASH IBC cells
fabrication through bi-level metallization
process
Thibaut Desrues, Sylvain de Vecchi, Thomas
Blévin, Fabien Ozanne, Delfina Muñoz, Pierre-
Jean Ribeyron
CEA-INES, Le Bourget du Lac, France
G30
(334)
Surface Passivation Schemes Deposited
in an HVM Batch ALD Reactor
Gijs Dingemans
1
,
Dieter Pierreux
1
,
Werner
Knaepen
1
,
Peter Zagwijn
2
,
Frank Huussen
2
,
Willem Jan Huisman
2
1
ASM, Leuven, Belgium,
2
ASM, Almere,
Netherlands
G34
(335)
Experimental Measurement of Lateral
Transport in the Inversion Layer of Silicon
Heterojunction Solar Cells
Hal S. Emmer
1
,
Michael G. Deceglie
1
,
Zachary
C. Holman
2
,
Antoine Descoeudres
2
,
Stefaan De
Wolf
2
,
Christophe Ballif
2
,
Harry A. Atwater
1
1
Thomas J. Watson Laboratories of Applied
Physics, California Institute of Technology,
Pasadena, CA, USA,
2
École Polytechnique
Fédérale de Lausanne (EPFL), Institute of
Microengineering (IMT), Neuchâtel, Switzerland
TECHNICAL PROGRAM
