176
39
th IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE
F13
(582)
Improved the Current Matching of the
Middle-Cell Current-Limited Triple-Junction
GaAs/Ge Solar Cells after Epitaxial Grown
Using Matrix Profile TiO2 Layer and Indium
Nanoparticles Plasmonics
Wen-Jeng Ho
1
,
Yi-Yu Lee
1
,
Jheng-Jie Liu
1
,
Chi-He
Lin
1
,
Yung-Ching Chiu
1
,
Hung-Pin Shiao
2
1
National Taipei University of Technology, Taipei,
Taiwan,
2
Win Semiconductor Corp., Taoyuan,
Taiwan
F15
(583)
Influence of barrier thickness modulation
of InGaN/GaN MQW solar cells
Chi-Chang Hsieh
1
,
Fang-I Lai
1
,
Hsun-Wen Wang
2
1
Department of Photonics Engineering, Yuan-Ze
University, Tao-Yuan, Taiwan,
2
Department of
Electrophysics, National Chiao Tung University,
Hsin-chu, Taiwan
F17
(584)
Preferential N-H Bond Orientation in
GaAsN
ꆡ
Grown by Chemical Beam Epitaxy
Kazuma Ikeda, Makoto Inagaki, Nobuaki Kojima,
Yoshio Ohshita, Masafumi Yamaguchi
Totayo Technological Institute, Nagoya, Japan
F19
(585)
Effects of
in-situ
annealing on GaInNAs
solar cells
Sarah R Kurtz
1
,
Aaron Ptak
1
,
John Geisz
1
,
Richard
King
2
,
Nasser Karam
2
1
National Renewable Energy Laboratory, Golden,
CO, USA,
2
Spectrolab, Sylmar, CA, USA
F21
(586)
GaAsP solar cells on GaP/Si grown by
molecular beam epitaxy
Jordan R Lang, Joseph Faucher, Stephanie
Tomasulo, Kevin Nay Yaung, Minjoo L Lee
Yale University, New Haven, CT, USA
F23
(587)
SiO
2
/
ZnSe Anti-reflection Coating for
Solar Cells
Shi Liu, Jacob Becker, Stuart Farrell, Weiquan
Yang, Yong-Hang Zhang
Center for Photonic Innovation and School of
Electrical, Computer and Energy Engineering,
Arizona State University, Tempe, AZ, USA
F25
(588)
Investigation of GaAs and GaInP solar
cells grown by solid-state molecular beam
epitaxy
Shulong Lu
1
,
Pan Dai
1
,
Lian Ji
1
,
Wei He
1
,
Hui
Yang
1
,
Masayuki Arimochi
2
,
Shiro Uchida
2
,
Tomomasa Watanabe
2
,
Kayoko Kikuchi
2
,
Hiroshi
Yoshida
2
,
Masao Ikeda
2
1
Suzhou Institute of Nano-Tech and Nano-
Bionics, Chinese Academy of Sciences, Suzhou,
China,
2
Advanced Material Laboratories, Sony
Corporation, Atsugi-shi, Japan
F27
(589)
Device Structure Engineering of
GaInNAsSb/GaAs Hetero-junction Solar Cells
Naoya Miyashita, Muhammad Monirul Islam,
Nazmul Ahsan, Yoshitaka Okada
RACST, The University of Tokyo, Tokyo, Japan
TECHNICAL PROGRAM
