178
39
th IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE
F35
(596)
Numerical Study of In
0.15
Ga
0.85
N/GaN MQW
Solar Cells with varying well band structure
Hsun-Wen Wang
1
,
Chi-Chang Hsieh
3
,
Fang-I Lai
3
,
Shiuan-Huei Lin
1
,
Hao-Chung Kuo
2
1
Department of Electrophysics, National Chiao
Tung University, Hsinchu, Taiwan,
2
Department
of Photonics & Institute of Electro-Optical
Engineering, Hsinchu, Taiwan,
3
Department of
Photonics Engineering, Yuan-Ze University, Tao-
Yuan, Taiwan
F36
(597)
Design Constraints of p-i-n GaAs/
InGaAsN Dilute Nitride Sub-cells for 3- and
4-
junction Solar Cell Applications under
Concentrated Illumination
Matthew Wilkins, Alex Walker, Jeffrey F Wheeldon,
Gilbert Arbez, Henry Schriemer, Karin Hinzer
University of Ottawa, Ottawa, ON, Canada
F37
(598)
Induced Junction III-Nitride Solar Cells
for Wide Band Gap Junctions: Modeling
Charge Transport and Band Bending in
Polarized Material
Joshua J Williams
1, 2
,
Kunal Ghosh
1
,
Nikolai N
Faleev
1
,
Todd L Williamson
2
,
Mark A Hossbauer
2
,
Christiana B Honsberg
1
1
Arizona State University, Tempe, AZ, USA,
2
Los
Alamos National Laboratory, Los Alamos, NM,
USA
F38
(599)
Strain Balanced Quantum Well Tunnel
Junctions
Michael K. Yakes
1
,
Matthew P. Lumb
1,2
,
Christopher G. Bailey
1
,
Maria Gonzalez
1,3
,
Robert
J. Walters
1
1
Naval Research Laboratory, Washington,
DC, USA,
2
George Washington University,
Washington, DC, USA,
3
Sotera Defense Solutions,
Washington, DC, USA
F39
(600)
Optimization of Bonded III-V on Si Multi-
Junction Solar Cells
Jingfeng Yang, Rafael Kleiman
Department of Engineering Physics, McMaster
University, Hamilton, ON, Canada
F40
(601)
InGaN-based Multiple Quantum Well
Photovoltaic Cells with Good Open-circuit
Voltage and Concentration Behavior
Xinhe Zheng, Xuefei Li, Dongyan Zhang,
Yuanyuan Wu, Haixiao Wang, Xingyuan Gan,
Naiming Wang, Hui Yang
Key Laboratory of Nanodevices and Applications,
Suzhou Institute of Nano-tech and Nano-bionics,
Chinese Academy of Science, Suzhou, China
TECHNICAL PROGRAM
