JUNE 16-21, 2013 • TAMPA, FLORIDA
87
TECHNICAL PROGRAM
Area 4 - Orals
3:30 - 5:00
PM
Ballroom C
Crystallization and Wafer
Chair: Noritaka Usami, Ethan Good
3:30
(60)
Grain Boundary Engineering for Mono-
Like Si
Kentaro Kutsukake
1,2
,
Noritaka Usami
1
,
Yutaka
Ohno
1
,
Yuki Tokumoto
1
,
Ichiro Yonenaga
1
1
Tohoku University, Sendai, Japan,
2
PRESTO,
JST, Saitama, Japan
4:00
(61)
Growth of Si Single Bulk Crystals Inside
Si Melts By the Noncontact Crucible Method
Using Silica Crucibles Without Coating Si
3
N
4
Particles
Kazuo Nakajima
1
,
Ryota Murai
1
,
Kohei Morishita
1
,
Kentaro Kutsukake
2
1
Kyoto University, Kyoto, Japan,
2
Tohoku
University, Sendai, Japan
4:15
(62)
Comparative Study Of Stress Inducing
Layers To Produce Kerfless Thin Wafers By
The Slim-Cut Technique
João M Serra
1
,
Pierre Bellanger
1
,
Killian Lobato
1
,
Roberto Martini
2
,
Maarten Debucquoy
2
,
Jef
Poortmans
2
1
Faculdade de Ciências Universidade de Lisboa/
SESUL, Campo Grande ED-C8, 1749-016 Lisboa,
Lisboa, Portugal,
2
imec, Kapeldreef 75, B-3001
Leuven, Leuven, Belgium
4:30
(63)
Suppression of Crystalline Defects at
the Edge of Ingots Grown by Unidirectional
Solidification under Controlled Wettability
Conditions
Tomihisa Tachibana
1,2
,
Hiroki Kusunoki
1
,
Shiro
Sakuragi
3
,
Yoshio Ohshita
4
,
Haruhiko Ono
5
,
Astushi Ogura
1
1
Meiji Univ., Kawasaki, Japan,
2
JSPS Research
Fellow, Tokyo, Japan,
3
Union Materials Inc.,
Ibaraki, Japan,
4
Toyota Tech. Inst., Nagoya,
Japan,
5
Kanagawa Ind. Tech. Center, Ebina,
Japan
4:45
(64) 19.4%
Quasi-Mono Cells By Conventional
Screen Printing Technology
Chen-Hao Yang, Jui-Chen Pu, Ya-Wen Chang,
Lung-Sheng Liao, Shi-kai Tzeng, Wen-Pin Chen,
Yu-Chung Chen
Motech Industries, Inc, Tainan, Taiwan
