JUNE 8-13, 2014 • DENVER, COLORADO
77
(171-F34)
MBE-grown InGaP/GaAs/InGaAsP triple junction
solar cells fabricated by advanced bonding technique.
Takeyoshi Sugaya
1
, Kikuo Makita
1
, Hidenori Mizuno
1
, Akihiro
Takeda
2
, Toru Mochizuki
2
, Ryuji Oshima
1
, Koji Matsubara
1
,
Yoshinobu Okano
2
, Shigeru Niki
1
.
1
AIST, Tsukuba, Japan,
2
Tokyo City University, Tokyo, Japan.
(172-F35)
Bonded InGaAs Cells for Microsystems Enabled
Photovoltaics.
Anna M Tauke-Pedretti, Jeffrey G Cederberg,
Charles Alford, Jose L Cruz-Campa, Carlos A Sanchez, Ian
Luna, Jeffrey S Nelson, Gregory N Nielson.
Sandia National
Laboratories, Albuquerque, NM, USA.
(173-F36)
GaNAsSb 1-eV Solar Cells For Use in Lattice-
Matched Multi-Junction Architectures.
Tomos Thomas
1
,
Markus Führer
1
, Ned Ekins-Daukes
1
, Kian Hua Tan
2
, Satrio
Wicaksono
2
, Wan Khai Loke
2
, Soon Fatt Yoon
2
, Andrew
Johnson
3
.
1
Imperial College London, London, UK,
2
Nanyang
Technological University, Singapore, Singapore,
3
IQE plc,
Cardiff, UK.
(174-F37)
Advancement in the MOVPE technology to
increase the process yield and expand the band gap
engineering possibilities.
Gianluca Timo’
1
, Nicola Armani
1
,
Giovanni Abagnale
1
, Bernd Schineller
2
.
1
RSE, Piacenza, Italy,
2
RSE, Piacenza, Italy,
3
RSE, Piacenza, Italy,
4
AIXTRON,
Herzogenrath, Germany.
(175-F38)
Development of the Monolithically
Interconnected InGaP/GaAs Dual Junction Solar Cell with
Bypass Diode for Ultrahigh Concentrator Application.
Kentaroh Watanabe
1
, Minato Seno
2
, Masakazu Sugiyama
2
,
Yoshiaki Nakano
2
.
1
Resarch Center for Advanced Science and
Technology, University of Tokyo, Tokyo, Japan,
2
Department of
Electrical Engineering and Information Systems, University of
Tokyo, Tokyo, Japan.
Area 4 - Posters
10:30 - 12:00 PM
Exhibit Hall D
Surface Passivation I
Chair(s): Oliver Schultz-Wittmann, Benedicte Demaurex,
Laura Ding
(176-F39)
Reactive Ion Etched Black Silicon Texturing:
A Comparative Study.
Thomas G. Allen
1
, James Bullock
1
,
Andres Cuevas
1
, Simeon C. Baker-Finch
1,2
, Fouad Karouta
3
.
1
Research School of Engineering, College of Engineering and
Computer Science, Australian National University, Canberra,
Australia,
2
PV Lighthouse, Coledale, Australia,
3
ANFF,
Research School of Physics and Engineering, Australian
National University, Canberra, Australia.
(177-G3)
AlOx Passivation Of Ion Implanted B Emitters
Using Batch ALD Process.
Vikram M Bhosle
1
, Mac
Hathaway
2
, Christopher E Dube
1
.
1
Applied Materials, Varian
Semiconductor Equipment, Gloucester, MA, USA,
2
Center for
Nanoscale Systems, Harvard University, Cambridge, MA, USA.
(178-G7)
Controlled Field Effect Surface Passivation of
Crystalline N-Type Silicon and its Application to Back-
Contact Silicon Solar Cells.
Ruy S Bonilla
1
, Christian
Reichel
2
, Martin Hermle
2
, Semih Senkader
1
, Peter Wilshaw
1
.
1
Department of Materials, University of Oxford, Oxford, UK,
2
Fraunhofer Institute for Solar Energy Systems ISE, Freiburg,
Germany.
TECHNICAL PROGRAM
