JUNE 16-21, 2013 • TAMPA, FLORIDA
137
H40
(355)
Top-down Aluminum Induced
Crystallization for N-type Solar Cell Emitters
Seth D Shumate
1,2
,
Hafeezuddin M Khaja
1
,
Douglas A Hutchings
1
,
Shui-Qing Yu
3
,
Hameed A
Naseem
3
1
Silicon Solar Solutions, Fayetteville, AR, USA,
2
Microelectronics Photonics, University of
Arkansas, Fayetteville, AR, USA,
3
Department of
Electrical Engineering, University of Arkansas,
Fayetteville, AR, USA
H42
(356)
Interdigitated Back Contact Silicon Solar
Cells with Laser Fired Contacts
Rubin Sidhu
1,2
,
Murray Bennett
2
,
George Hmung
2
,
Wensheng Ren
2
,
Lian Zou
2
,
David Carlson
2
,
Jingbing Dong
3
,
Xiaoqiang Li
3
,
Jiangang Lu
3
,
Wentao Song
3
,
Longzhong Tao
3
,
Zhengyue Xia
3
,
Zhuojian Yang
3
,
Guoqiang Xing
3
1
Hareon Solar USA, San Jose, CA, USA,
2
formerly
at BP Solar, Frederick, MD, USA,
3
Hareon Solar
Tech. Co. Ltd., Jiangyin Jiangsu, China
H44
(357)
A robust SmartSilicon technology for
a-Si:H heterojunction cells on MG and UMG-Si
with efficiencies in the 16 -18% range
Ashok K Sinha
1
,
Joseph Bach
1
,
Surinder Bedi
1
,
Ki-Bum Kim
3
,
Leiping Lai
2
,
Bin Li
2
,
John Li
2
,
Wen
Ma
1
,
Scott McHugo
1
,
Frank Pham
1
,
Chenlei Wang
1
1
Sunpreme Inc., Sunnyvale, CA, USA,
2
Sunpreme
Jiaxing Ltd., Jiaxing, China,
3
Department of
Materials Science and Engineering, Seoul
National University, Seoul, South Korea
I2
(358)
Surface passivation of crystalline silicon
with Al
2
O
3
/
TiO
2
stack layer
Dongchul Suh, Jun Yu, Wensheng Liang, Duk Y.
Choi, Klaus J. Weber
Australian National University, Canberra, Australia
I4
(359)
Industrially Rear Side Passivated Cz
Mono-crystalline Cells with 19.5% Efficiency
Zhuo Xu, Xueliang Yang, Gaofei Li, Wenchao
Zhao, Decheng Yang, Zhiyan Hu, Jingfeng Xiong
Yingli Green Energy, Baoding, China
I6
(360)
Light Trapping Effect Of Nanoimprinted-
Textured Crystalline Silicon Solar Cells
Seiya Yoshinaga
1
,
Yasuaki Ishikawa
1, 2
,
Shinji
Araki
1
,
Yukiharu Uraoka
1, 2
1
Nara Institute of Science and Technology, 8916-5,
Takayama, Ikoma, Nara, Japan,
2
JST-CREST, 4-1-
8,
Honcho, Kawaguchi, Saitama, Japan
TECHNICAL PROGRAM
